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2025, 10, v.59 137-141
电活性无机膜对芯片保护作用机理研究及器件优化
基金项目(Foundation): 南方电网重点科技支撑项目(2023ZDXM-GY-124)
邮箱(Email):
DOI: 10.20222/j.cnki.cn61-1124/tm.2025.10.008
发布时间: 2025-10-20
出版时间: 2025-10-20
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摘要:

本文基于传统有机保护材料聚酰亚铵(PI)保护晶闸管阻断电压低和漏电流大的问题,开展了晶闸管结终端造型表面保护材料研究工作,通过分析晶闸管结终端造型表面电场理论原理,提出了一种电活性无机膜用于保护晶闸管结终端造型表面。通过与传统PI有机保护材料进行对比分析。结果表明,电活性无机膜材料能够改善表面电场分布,从而能够提高阻断电压和降低漏电流,可以全面优化晶闸管的设计制造技术,提高晶闸管的稳定性和可靠性。

Abstract:

This study focuses on the research of shaped surface protection materials for thyristor junction termination profiles,addressing the issues of low blocking voltage and large leakage current of thyristors protected by polyimide(PI),a traditional organic protective material.By analyzing the theoretical principle of the shaped surface electric field of thyristor junction termination profiles,an electroactive inorganic membrane is proposed for protecting the shaped surface of thyristor junction termination profiles.A comparative analysis is conducted between this new film and the traditional PI organic protective material.The results show that the electroactive inorganic membrane material can improve the distribution of the shaped surface electric field,thereby increasing the blocking voltage and reducing the leakage current. This material can comprehensively optimize the design and manufacturing technology of thyristors,as well as enhance the stability and reliability of thyristors.

参考文献

[1]马宁强,陈黄鹂,乔旭,等.阻态下晶闸管的温度场模型计算及热失效分析[J].电力电子技术,2021,55(12):51-54.Ma Ningqiang,Chen Huangli,Qiao Xu,et al. Temperature Field Model Calculation and Thermal Failure Analysis of Thyristor in Blocking State[J]. Power Electronics,2021,55(12):51-54.

[2]李杰,庞磊,陈炫宇,等.稳态电压加速应力下晶闸管特征参数退化规律及失效机理分析[J].电网技术,2021,45(12):4941-4948.Li Jie,Pang Lei,Chen Xuanyu,et al. Degradation Law and Failure Mechanism Analyses of Thyristor Characteristic Parameters Under Steady State Voltage[J].Power System Technology,2021,45(12):4941-4948.

[3]汪波,胡安,唐勇,等.IGBT集电极漏电流特性及影响分析[J].电力电子技术,2011,45(10):128-130.Wang Bo,Hu An,Tang Yong,et al.Analysis of Characteristic and Influence of IGBT Collector Leakage Current[J].Power Electronics,2011,45(10):128-130.

[4]罗皓泽,陈忠,杨为,等.压接式IGBT和晶闸管器件失效模式与机理研究综述[J].中国电力,2023,56(5):137-152.Luo Haoze,Chen Zhong,Yang Wei,et al.Review on Failure Mode and Mechanism of Press-pack IGBT and Thyristor Devices[J].Electric Power,2023,56(5):137-152.

[5]赖桂森,谢桂泉,邵珠柯,等.国产硅橡胶保护的特高压晶闸管可靠性分析[J].电力电子技术,2024,58(9):107-110.Lai Guisen,Xie Guiquan,Shao Zhuke,et al.Reliability Experimental Analysis of Ultra-high-voltage Thyristor Protected by Domestic Silicone Rubber[J].Power Electronics,2024,58(9):107-110.

[6]仝玮,李华,傅鹏,等.一种脉冲电流工况下晶闸管缓冲电路的优化方法[J].强激光与粒子束,2020,32(2):81-87.Tong Wei,Li Hua,Fu Peng,et al.A Parameter Optimization Method of Snubber Circuit of Thyristor Under Pulse Current Working Condition[J].High Power Laser and Particle Beams,2020,32(2):81-87.

[7]王义军,原义宁,盛之遥,等.基于晶闸管的电容换相式混合直流断路器拓扑[J].东北电力大学学报,2024,44(3):55-63.Wang Yijun,Yuan Yining,Sheng Zhiyao,et al.Thyristor Based Capacitor Commutator Hybrid DC Circuit Breaker Topology[J].Journal of Northeast Dianli University,2024,44(3):55-63.

[8]叶明天,庞磊,张乔根,等.反向恢复期脉冲作用下高压晶闸管失效分析[J].电力工程技术,2022,41(4):135-142.Ye Mingtian,Pang Lei,Zhang Qiaogen,et al. Failure Analysis of High Voltage Thyristor Under Impulse During Reverse Recovery Period[J].Electric Power Engineering Technology,2022,41(4):135-142.

[9]陈黄鹂,王红梅,程炯,等.特大功率晶闸管结终端技术对阻断电压的影响[J].电力电子技术,2022,56(3):130-132.Chen Huangli,Wang Hongmei,Cheng Jiong,et al.Influence of Junction Termination Technology of Ultra-high Power Thyristor on Blocking Voltage[J]. Power Electronics,2022,56(3):130-132.

[10]高山城,李翀,吴飞鸟,等.特高压晶闸管结终端造型技术[J].半导体技术,2015,40(2):129-135.Gao Shancheng,Li Chong,Wu Feiniao,et al. Junction Terminal Structure Technology of Ultra High Voltage Thyristor[J].Semiconductor Technology,2015,40(2):129-135.

[11]徐建丽,夏婷婷.功率半导体器件击穿特性及结终端结构参数研究[J].硅酸盐通报,2018,37(6):2067-2072,2078.Xu Jianli,Xia Tingting. Breakdown Characteristics and Junction Termination Structural Parameters of Power Semiconductor Devices[J]. Bulletin of the Chinese Ceramic Society,2018,37(6):2067-2072,2078.

[12]周世刚,于永强,夏元治,等.漏场板提升增强型AlGaN/GaN/AlGaN HEMT击穿电压的研究[J].合肥工业大学学报(自然科学版),2025,48(5):622-627.Zhou Shigang,Yu Yongqiang,Xia Yuanzhi,et al.Breakdown Voltage of Enhancement-mode AlGaN/GaN/AlGaN HEMT Improved by Drain Field Plate Structure[J].Journal of Hefei University of Technology(Natural Science),2025,48(5):622-627.

[13]郭可飞,尹飞,刘立宇,等.Zn扩散对InGaAs/InP单光子雪崩光电二极管雪崩击穿概率的影响[J].光子学报,2023,52(6):184-194.Guo Kefei,Yin Fei,Liu Liyu,et al.Effect of Zn Diffusion on Avalanche Breakdown Probability of InGaAs/InP Single Photon Avalanche Diodes[J].Acta Photonica Sinica,2023,52(6):184-194.

[14]王祥,章国豪.蓝宝石基GaN功率器件的稳定性及应用研究[J].机电工程技术,2025,54(9):73-77,167.Wang Xiang,Zhang Guohao. Stability and Application Analysis of GaN Power Devices on Sapphire Substrates[J].Mechanical&Electrical Engineering Technology,2025,54(9):73-77,167.

[15]崔曼,胡震,张腾飞,等.基于壳温信息的功率器件可靠性分析[J].电工技术学报,2023,38(24):6760-6767.Cui Man,Hu Zhen,Zhang Tengfei,et al. Reliability Analysis of Power Device Based on the Case Temperatures[J]. Transactions of China Electrotechnical Society,2023,38(24):6760-6767.

基本信息:

DOI:10.20222/j.cnki.cn61-1124/tm.2025.10.008

中图分类号:TN40

引用信息:

[1]高山城,范晓波,高凌屹,等.电活性无机膜对芯片保护作用机理研究及器件优化[J].电力电子技术,2025,59(10):137-141.DOI:10.20222/j.cnki.cn61-1124/tm.2025.10.008.

基金信息:

南方电网重点科技支撑项目(2023ZDXM-GY-124)

发布时间:

2025-10-20

出版时间:

2025-10-20

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