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在传统电压型SiC MOSFET驱动电路中,驱动损耗、功率管开关损耗随着主电路开关频率、电压等级的提高而增大,驱动参数固定条件下,损耗不能得到优化。针对此问题,提出了一种应用于DC/AC逆变器的SiC MOSFET自适应电流源型驱动(CSD)电路,驱动电流可随负载电流自适应变化。以一个半桥逆变器为例,阐述了控制原理,详细分析了恒流驱动下功率管的开关特性,根据SiC MOSFET的驱动要求,以一个开关周期内损耗最小为原则设计了自适电流源驱动电路。最后通过实验验证了所提方法的有效性。
Abstract：In the traditional voltage source gate driver for driving silicon carbide metal-oxide-semiconductor field-effect transistor(SiC MOSFET),the driving loss and the switching loss rise with the increase of the switching frequency and voltage level,and the fixed driving parameters cannot obtain the optimal efficiency.To solve this problem,an adaptive current source gate driver applying to SiC MOSFET in a DC/AC inverter is proposed.The driving current can be adaptively changed with the load current.Taking a half-bridge inverter as an example,the control and application principle of the proposed method are explained.The switching characteristics of the power MOSFET under constant driving current are analyzed in detail.According to the driving requirements of SiC MOSFET,the adaptive current source driver is designed based on the minimum driving loss in one switching period.Finally,the effectiveness of the proposed method is verified by experiment.
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基本信息:
中图分类号:TM464;TN386.1
引用信息:
[1]朱津仪,王勤,伍群芳.一种用于逆变器的SiC MOSFET自适应电流源驱动[J].电力电子技术,2020,54(10):5-9.
2020-10-20
2020-10-20